System And Method For Identifying An Individual

ABSTRACT

The present invention provides a system for identifying an individual provided with a portable communication device. In a system for identifying an individual using a portable communication device with a display, the display is a sensor-incorporated display, the sensor-incorporated display reads the biological information of a user, and, based on the read information, identifies an individual.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.13/865,413, filed Apr. 18, 2013, now allowed, which is a continuation ofU.S. application Ser. No. 12/652,341, filed Jan. 5, 2010, now U.S. Pat.No. 8,437,510, which is a continuation of U.S. application Ser. No.09/833,674, filed Apr. 13, 2001, now U.S. Pat. No. 7,751,600, whichclaims the benefit of a foreign priority application filed in Japan asSerial No. 2000-116694 on Apr. 18, 2000, all of which are incorporatedby reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a system for identifying an individual or amethod for identifying the same, in particular, a system or a method foridentifying an individual by means of a display, which is provided witha sensor.

2. Description of the Related Art

In recent years, the communication technology through the Internet bymeans of portable communication device, such as a portable telephone ora portable information terminal, are developing rapidly. Theconventional Internet assures communication through a telephone line towhich a personal computer installed in an office or a house isconnected. However, recently, the i-mode that permits of utilization ofthe Internet easily through a portable telephone became popular andvarious exchanges of information became simple to carry out.

What is going to be described in this specification relates to a systemfor identifying an individual by means of the Internet and a portablecommunication device.

FIG. 16 shows an example of conventional portable telephone apparatus. Aconventional telephone apparatus shown in FIG. 16 is comprised of a mainbody 2601, a voice output part 2602, a voice input part 2603, a display2604, operation switch 2605, an antenna 2606, etc. In case of anordinary telephone call, the phone number of the opposite end, the stateof reception of radio wave, etc. are shown on the liquid crystaldisplay. And, in the case where the Internet is utilized, the necessaryinformation concerning the opposite end are to be displayed.

When receiving or giving money on the Internet by means of aconventional portable telephone as shown in FIG. 16, identification onthe person was necessary. In this case, the confirmation has beenexecuted by entering the personal identification number, which had beenregistered beforehand on the opposite end, and by exchanging data withthe opposite end.

FIG. 17 shows the conventional identification flow of an individual. Atfirst, the user makes a connection through the Internet with theopposite end, then enters the numerical value for identification (PIN)under the condition specified by the opposite end. The opposite endwhich has received the numerical value checks it with the numericalvalue registered beforehand and confirms whether or not they coincide.If they coincide here, the user is confirmed and becomes capable toobtain the desired reception.

As explained above, the following problems exist in the conventionalidentifying system using a portable telephone:

1. Confirmation of individual is difficult. In the case where thepersonal identification number is leaked to another person, there is apossibility of an abuse.

2. Confirmation of an individual is executed for each communication withthe opposite end, so that the communication cost increases and areconfirmation becomes necessary if the phone call is cut during theconversation.

3. Many keyboard operations.

SUMMARY OF THE INVENTION

The present invention provides a system for identifying an individualcomprising: a means for reading the biological information of a user bymeans of a sensor-incorporated display; a means for checking the readbiological information with the reference biological information; and ameans for transmitting information to the destination of communicationthat the checking has matched in the case where they have matched.

The present invention provides a system for identifying an individual, scomprising: a means for reading the biological information of a user bymeans of a sensor-incorporated display; a means for checking the readbiological information with the reference biological information; ameans for transmitting information to the destination of communicationthat the checking has matched in the case where they have matched; and ameans for notifying said user, after said destination of communicationreceives information that said checking has matched, that thecommunication between said user and said destination of communicationhas been authorized.

The present invention provides a system for identifying an individual,which is provided with a portable communication device having asensor-incorporated display, comprising: a means for reading thebiological information of a user by means of said sensor-incorporateddisplay; a means for checking the read biological information with thereference biological information stored in said portable communicationdevice; and a means for transmitting information to the destination ofcommunication that the checking has matched in the case where they havematched.

The present invention provides a system for identifying an individual,which is provided with a portable communication device having asensor-incorporated display, comprising: a means for reading thebiological information of a user by means of a sensor-incorporateddisplay; a means for checking the read biological information with thereference biological information stored in said sensor-incorporateddisplay; a means for transmitting information to the destination ofcommunication that they have matched in the case where said checking hasmatched; and a means for transmitting information to said portablecommunication device, after the destination of communication receivesinformation that said checking has matched, that the communicationbetween said user and said destination of communication has beenauthorized.

The present invention provides a method for identifying an individual,comprising: a means for reading the biological information of a user bymeans of a sensor-incorporated display; a means for checking the readbiological information with the reference biological information; and ameans for transmitting information to the destination of communicationthat they have matched in the case where said checking has matched.

The present invention provides a method for identifying an individual,comprising: a means for reading the biological information of a user bymeans of a sensor-incorporated display; a means for checking the readbiological information with the reference biological information; ameans for transmitting information to the destination of communicationthat they have matched in the case where said checking has matched; anda means for notifying said user, after said destination of communicationreceives information that said checking has matched, that thecommunication between said user and said destination of communicationhas been authorized.

The present invention provides a method for identifying an individual,which is provided with a portable communication device having asensor-incorporated display, comprising: a means for reading thebiological information of a user by means of said sensor-incorporateddisplay; a means for checking the read biological information with thereference biological information stored in said portable communicationdevice; and a means for transmitting information to the destination ofcommunication that they have matched in the case where said checking hasmatched.

The present invention provides a method for identifying an individual,which is provided with a portable communication device having asensor-incorporated display, comprising: a means for reading thebiological information of a user by means of said sensor-incorporateddisplay; a means for checking the read biological information with thereference biological information stored in said portable communicationdevice; a means for transmitting information to the destination ofcommunication that they have matched in the case where said checking hasmatched; and a means for transmitting information to the portablecommunication device, after the destination of communication receivesinformation that said checking has matched, that the communicationbetween said user and said destination of communication has beenauthorized.

The portable communication device of this invention is possible toidentify an individual by means of the functions of the sensorincorporated in the device and has a possibility to have a highreliability and simplicity, compared with the conventionalidentification works consisting of entering a numerical value (personalidentification number).

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an identification flow of the system for identifying anindividual of this invention.

FIG. 2 is an external view of the portable communication device of thisinvention.

FIG. 3 is a drawing showing how to use the portable communication deviceof this invention.

FIG. 4 is a drawing showing how to use the portable communication deviceof this invention.

FIG. 5 is a block diagram showing the structure of thesensor-incorporated display.

FIG. 6 is a block diagram showing the structure of thesensor-incorporated display.

FIG. 7 is a circuit diagram of the sensor portion. to FIG. 8 is acircuit diagram of the pixel.

FIG. 9 is a circuit diagram of the sensor portion.

FIG. 10 is a block diagram showing the structure of thesensor-incorporated display.

FIGS. 11A to 11D are drawings showing the fabrication process of thesensor-incorporated display.

FIGS. 12A to 12C are drawings showing the fabrication process of thesensor-incorporated display.

FIGS. 13A to 13C are drawings showing the fabrication process of thesensor-incorporated display.

FIGS. 14A and 14B are an external view and a sectional view of thesensor-incorporated display, respectively.

FIGS. 15A and 15B are an external view and a sectional view of thesensor-incorporated display, respectively.

FIG. 16 is a drawing of a conventional portable telephone. FIG. 17 is aflow of conventional identification of an individual.

FIG. 18 is a drawing showing the position of the palm pattern to beread.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In this invention, as an embodiment to resolve the problems describedabove, a biological information that a user has (a specific physicalinformation that the person has naturally such as finger prints or palmpattern), instead of personal identification number, is utilized foridentification of an individual. And by doing the identification processnot on the opposite end, but by the portable communication deviceitself, the simplicity as a system is increased.

FIG. 1 shows the identification flow of the system of identifying anindividual of this invention. At first, collection of biologicalinformation is instructed by means of a keyboard. If programmedbeforehand, it is easy to make it possible to start the collection ofbiological information by pushing only on one key. Furthermore, it isalso possible to set up to start automatically the collection ofbiological information when the portable communication device isswitched on.

The obtained biological information is compared with the person'sreference biological information, which is stored in the non-volatilememory of the portable communication device. If it is then judged thatthe read biological information coincides with the reference biologicalinformation, the user is judged as the legitimate owner of the portablecommunication device. The transmission to the opposite end is carriedout after finishing the judgement. At this time, the identificationprocess has already been finished, there is no need to effectuate againthe identification process on the opposite end, and the opposite endneeds only to receive information from the portable communication devicethat the identification has been finished.

What differentiates the portable communication device, which is used inthe system for identifying an individual of the embodiment of thepresent invention, from conventional ones is that the display of thesystem for identifying in the embodiment of the present invention has abuilt-in sensor, while the display of conventional portable telephonesis dedicated to displaying. The sensor used here is an area sensor whichis utilized to read the biological information of a user. Biologicalinformation means physically inherent information that the user hasnaturally, such as a fingerprint or a palm pattern (the lines on thepalm).

Then, description is given of the portable communication device of thisinvention. FIG. 2 shows a portable communication of this invention witha display panel 2701 and an operation panel 2702. The display panel 2701and the operation panel 2702 are connected at the connecting part 2703.And at the connecting part 2703, the angle q between the surface onwhich is installed the sensor-incorporated display 2704 (display with abuilt-in sensor) of display panel 2701 and the surface on which isinstalled the operating keys 2706 of operation panel 2702 is able to bechanged to be any degrees.

The display panel 2701 has a sensor-incorporated display 2704.Furthermore, the portable communication device shown in FIG. 2 has afunction of a telephone, the display panel 2701 has a voice output part2705, and the voice is output from the voice output part 2705. For thesensor-incorporated display 2704, an EL display is used.

The operation panel 2702 has operating keys 2706, a power supply switch2707 and a voice input part 2708. Furthermore, although in FIG. 2 theoperating keys 2706 and the power supply switch 2707 are providedseparately, a structure in which the power supply switch 2707 isincluded in the operating keys 2706 may be employed. Voice is input atthe voice input part 2708.

Furthermore, although in FIG. 2 the display panel 2701 has a voiceoutput part 2705 and the operation panel 2702 has a voice input part2708, this embodiment is not limited to this structure. It is alsopossible that the display panel 2701 has a voice input part 2708 and theoperation panel has a voice output part 2705. Furthermore, it is alsopossible that both the voice output part 2705 and the voice input part2708 are installed on the display panel 2701 or that both are installedon the operation panel 2702.

With reference to FIG. 3 and FIG. 4, how to use the portablecommunication device shown in FIG. 2 will be described. In case wherethe identification is executed by this device, it is used by posing thepalm on the portable communication device to cover it. Theidentification is executed by key operation on the keyboard, while thesensor-incorporated display reads the palm of a user and does theidentification process. Here, as the palm covers the portable device,the light used for sensing should be obtained from the interior of thedisplay. In consequence, a spontaneous light emitting display ispreferred such as an organic EL display. As shown in FIG. 18, the sensorreads the palm pattern (the lines on the palm).

Although, while FIG. 3 shows an example of operation of the operatingkeys 2706 with the index finger, it is also possible to operate theoperating keys 2706 with the thumb as shown in FIG. 4. Furthermore, theoperating keys 2706 can be installed on the side surface of operationpanel 2702. The operation can be executed either with the index fingeror the thumb of one hand (the dominant hand).

The embodiments of this invention shall be described below.

Embodiment 1

In the following, the arrangement and action of the examples of portablecommunication device having a sensor-incorporated display used in thisinvention shall be described.

FIG. 5 is a block diagram of the portable communication device of thisembodiment. This portable communication device is identical withconventional ones in having an antenna 601, a transmission and receptioncircuit 602, a signal processing circuit 603 to compress, expand andencode signals, a microcomputer 604 for control, a flash memory 605, akeyboard 606, a voice input circuit 607, voice output circuit 608, amicrophone 609, a speaker 610 and, in addition, this device further hasa sensor-incorporated display 611, a checking circuit part 612, etc.

When doing a check, the analog image information obtained by the sensorin the display is converted to digital signals by means of the A/Dconverter 613. The converted signals are sent to DSP (digital signalprocessor) 614 and signal processing is carried out. In the signalprocessing, to make the distinguishing of the lines on the palm easier,the portions of the image at which the shade change can be madeconspicuous by using a differential filter or the like. The data of thelines on the palm thus obtained are digitized inside DSP 614 and sent tothe comparison circuit 615. At the comparison circuit 615, the referencedata stored in flash memory 605 are also called and the two data arechecked by comparison.

As methods for distinguishing the biological information, there is amethod of checking the characteristics which compares and checks thecharacteristics respectively and a method of image matching whichcompares directly two data. Either of these methods can be used withoutproblem. Furthermore, in stead of only one datum, several identificationdata, for example, by changing a little the direction of the hand, canbe provided to make the identification more precise.

If the matching is observed here, the microcomputer 604 for controloutputs an identification signal which is transmitted via signalprocessing part 603, transmission and reception circuit 602, and antenna601, and then delivered through the Internet. etc.

Embodiment 2

FIG. 6 is a block diagram showing the structure of sensor-incorporateddisplay used in this invention. 120 is a source signal line drivecircuit and 122 is a gate signal line drive circuit, both control thedriving of the TFT 104 for switching and the TFT 105 for driving EL. And121 is a source signal line drive circuit for sensor and 123 is a gatesignal line drive circuit for sensor, both control the driving of theTFT 110 for reset, the TFT 111 for buffer and TFT 112 for selection.Furthermore, in this description, the source signal line drive circuit120, gate signal line drive circuit 122, source signal line drivecircuit 121 for sensor, and gate signal line drive circuit 123 forsensor are called driving parts.

The source signal line drive circuit 120 has a shift register 120 a, alatch (A) 120 b and a latch (B) 120 c. At the source signal line drivecircuit 120, the clock signal (CLK) and the start pulse (SP) are enteredto the shift register 120 a. The shift register 120 a generates timingsignals in turn according to these clock signals (CLK) and start signals(SP) to provide in order the downstream circuits with timing signals.

Furthermore, it is possible to provide the downstream circuits withbuffer amplified timing signals in order after having amplified thetiming signal from the shift register 120 a by a buffer (not shown) forexample. Because on the wires where the timing signals are providedthere are many circuits or elements connected, its load capacitance(parasitic capacitance) is large. The buffer is installed in order toavoid a “slow down” of rise up or rise down of the timing signals due tothis large load capacitance.

In FIG. 7 the circuit diagram of the sensor portion 101 is shown. Thesensor portion 101 is provided with source signal lines S1 to Sx, powersupply lines V1 to Vx, gate signal lines G1 to Gy, gate signal lines RG1to RGy for reset, gate signal lines SG1 to SGy for sensor, output wiresSS1 to SSx for sensor and power supply line VB for sensor.

The sensor portion 101 has a plurality of pixels 102. The pixel 102 haseither one of source signal lines S1 to Sx, any one of power supplylines V1 to Vx, either one of gate signal lines G1 to Gy, either one ofgate signal lines RG1 to RGy for reset, either one of gate signal linesSG1 to SGy for sensor, either one of sensor output wires SS1 to SSx andpower supply line VB for sensor.

Each of the sensor output wires SS1 to SSx is connected respectively tothe constant current sources 103_1 to 103_x.

FIG. 8 shows the detail structure of pixel 102. The area surrounded bythe dotted line shows a pixel 102. Furthermore, the source signal line Smeans either one of source signal lines S1 to Sx. And the power supplyline V means either one of power supply lines V1 to Vx. And the gatesignal line G means either one of gate signal lines G1 to Gy. And thegate signal line RG for reset means either one of gate signal lines RG1to RGy for reset. And the gate signal line SG for sensor means eitherone of gate signal lines SG1 to SGy for sensor. Then the sensor outputwire SS means either one of sensor output wires SS1 to SSx.

The pixel 102 has a TFT 104 for switching, a TFT 105 for driving EL andan EL element 106. Further in FIG. 8, while the pixel 102 is providedwith a condenser 107, the condenser 107 is not always necessary.

An EL element 106 is composed of an anode, a cathode and an EL layerprovided between the anode and the cathode. When the anode is connectedwith the source region or the drain region of the TFT 105 for drivingEL, the anode is the pixel electrode and the cathode is the oppositeelectrode. On the contrary, if the cathode is connected with the sourceregion or the drain region of the TFT 105 for driving EL, the anode willbe the opposite electrode and the cathode will be the pixel electrode.

The gate electrode of the TFT 104 for switching is connected with thegate signal line G. And of the source region and the drain region of theTFT 104 for switching, one is connected with the source signal line Sand the other with the gate electrode of the TFT 105 for driving EL.

Of the source region and the drain region of the TFT for driving EL, oneis connected with the power supply line V and the other with the ELelement 106. The condenser 107 is installed connected with the gateelectrode of the TFT 105 for driving

EL and the power supply line V.

Furthermore, the pixel 102 has a TFT 101 for reset, a TFT 111 forbuffer, a TFT 112 for selection and a photodiode 113.

The gate electrode of the TFT 110 for reset is connected with the gatesignal line RG for reset. The source region of the TFT 110 for reset isconnected with the power supply line VB for sensor. The power supplyline VB for sensor is always maintained to a constant potential (thereference potential). Further the drain region of the TFT 110 for resetis connected with the photodiode 113 and the gate electrode of the TFT111 for buffer.

It is not illustrated, but the photodiode has a cathode, an anode, and aphotoelectric conversion layer provided between the cathode and theanode. The drain region of the TFT 110 for reset is connected inpractice with the anode or cathode of photodiode 113.

The drain region of the TFT 111 for buffer is connected with the powersupply line VB for sensor and maintained at a constant referencepotential. And the source region of the TFT 111 for buffer is connectedwith the source region or drain region of the TFT 112 for selection.

The gate electrode of the TFT 112 for selection is connected with thegate signal line SG for sensor. And of the source region and the drainregion of the TFT 112 for selection, one is connected as above-mentionedto the source region of the TFT 111 for buffer and the other to thesensor output wire SS. The sensor output wire SS is connected with theconstant current source 103 (any one of constant current source 103_1 to103_x) and always a constant current flows in it.

The timing signals from the shift register 120 a shown in FIG. 6 aresupplied to the latch (A) 120 b. The latch (A) 120 b has latches at aplurality of stages to process digital signals. The latch (A) 120 bwrites and holds in order the digital signals at the same time as saidtiming signals are entered.

Furthermore, when digital signals are taken into the latch (A) 120 b,the digital signals can be subsequently input into the latches at aplurality of stages that the latch (A) 120 b has. But this invention ofapplication is not limited to this composition. The latches at aplurality of stages that the latch (A) 120 b has can be sorted intoseveral groups and the so-called divided driving can be executed byentering digital signals at the same time to each of the groups inparallel. Furthermore, the number of groups in this case is called thedivision number. For example, when the latches are sorted into groupswith 4 stages each, it is driven divided by four divisions.

The time to finish the writing of digital signals to the latches of allstages of latch (A) 120 b is called the line period. That is to say, theline period is the time interval, from the time when the writing ofdigital signal starts at the latch of the most left side stage in thelatch (A) 120 b, to the time when the writing of digital signalsfinishes at the latch of the stage the far right side. In practice, theline period can contain the horizontal retrace line period in additionto said line period.

When the line period is finished, a Latch Signal is supplied to thelatch (B) 120 c. At this moment, the digital signals written and held inthe latch (A) 120 b are transmitted at once to the latch (B) 120 c alltogether, and written and held in the latches of all stages of the latch(B) 120 c.

The latch (A) 120 b which has finished to transmit digital signals tothe latch (B) 120 c executes again the writing of digital signals inorder according to the timing signals from the shift register 120 a.

During this 1 line period of the second cycle, the digital signals,which are written and held in the latch (B) 120 b, are entered to thesource signal lines S1-Sx.

On the other hand, each of the drive circuits 122 of the gate signalside has a shift register and a buffer (non of these are illustrated).But as the case may be, the drive circuits 122 of the gate signal sidecan have a level shift in addition to the shift register and buffer.

At the drive circuits 122 on gate signal side, gate signals from theshift register (not shown) are supplied to the buffer (not shown), thento the corresponding gate signal line. To each of the gate signal linesG1 to Gy, a gate electrode of TFT 104 for switching pixels for 1 line isconnected and, as all the TFT 104 for switching the pixels for 1 lineshould be on at the same time, a buffer which permits a big current flowis used.

Furthermore, the number, composition and actions of the source signalline drive circuits and of the gate signal line drive circuits are notlimited to the composition of this embodiment. The area sensor used inthe sensor-incorporated display of the invention is able to usewell-known source signal line drive circuits and gate signal line drivecircuits.

The composition of this embodiment can be executed in any combinationwith the embodiment 1.

Embodiment 3

A circuit diagram of the sensor portion with different composition fromthe sensor portion of the embodiment 2 is shown in FIG. 9. The sensorportion 1001 is provided with the source signal lines S1 to Sx, powersupply lines V1 to Vx, gate signal lines G1 to Gy, gate signal lines RG1to RGy for reset, sensor output wires SS1 to SSx and power supply lineVB for sensor.

The sensor portion 1001 has a plurality of pixels 1002. The pixel 1002has either one of source signal lines S1 to Sx, either one of powersupply lines V1 to Vx, either one of gate signal lines G1 to Gy, eitherone of gate signal lines RG1 to RGy for reset, either one of sensoroutput wires SS1 to SSx and the power supply line VB for sensor.

Each of the sensor output wires SS1 to SSx is connected with theconstant current source 1003_1 to 1003_x respectively.

The pixel 1002 has a TFT 1004 for switching, a TFT 1005 for driving ELand an EL element 1006. Further in FIG. 9 the pixel 1002 is providedwith a condenser 1007, but the condenser 1007 is not always required.Furthermore, the pixel 1002 has a TFT 1010 for reset, a TFT 1011 forbuffer, a TFT 1012 for selection and a photodiode 1013.

The EL element 1006 is composed of an anode, a cathode, and an EL layerprovided between the anode and the cathode. When the anode is connectedwith the source region or drain region of the TFT 1005 for driving EL,the anode is the pixel electrode and the cathode is the oppositeelectrode. On the contrary, if the cathode is connected with the sourceregion or drain region of the TFT 1005 for driving EL, the anode will bethe opposite electrode and the cathode the pixel electrode.

The TFT 1004 for switching is connected with the gate signal lines (G1to Gy). And of the source region and the drain region of the TFT 1004for switching, one is connected with the source signal line S and theother with the gate electrode of the TFT 1005 for driving EL.

Of the source region and the drain region of the TFT 1005 for drivingEL, one is connected with the power supply lines (V1 to Vx) and theother is connected with the EL element 1006. The condenser 1007 isconnected with the gate electrode of TFT 1005 for driving EL and withthe power supply lines (V1 to Vx).

The gate electrode of the TFT 1010 for reset is connected with the gatesignal lines (RG1 to RGx) for reset. The source region of TFT 1010 forreset is connected with the power supply line VB for sensor. The powersupply line VB for sensor is always maintained at a constant potential(the reference potential). Further the drain region of TFT 1010 forreset is connected with the photodiode 1013 and with the gate electrodeof TFT 1011 for buffer.

Though it is not illustrated in the figure, the photodiode 1013 has acathode, an anode, and a photoelectric conversion layer provided betweenthe cathode and the anode. The drain region of TFT 1010 for reset isconnected in practice with the cathode or anode of photodiode 1013.

The drain region of TFT 1011 for buffer is connected with the powersupply line VB for sensor and maintained always at the constantreference potential. And the source region of TFT 1011 for buffer isconnected with the source region or drain region of TFT 1012 forselection.

The gate electrode of TFT 1012 for selection is connected with the gatesignal lines (G1 to Gx). And of the source region and the drain regionof TFT 1012 for selection, one is connected as above-mentioned to thesource region of TFT 1011 for buffer and the other is connected to thesensor output wires (SS1 to SSx). Each of the sensor output wires (SS1to SSx) is connected with the constant current source 1003 (constantcurrent source 1003_1 to 1003_x) and always a constant current flows.

In this embodiment, the TFT 1004 for switching and the TFT 1012 forselection have identical polarity. That is to say, when the TFT 1004 forswitching is a TFT of n-channel type, the TFT 1012 for selection is aTFT of n-channel type also. And if the TFT 1004 for switching is a TFTof p-channel type, the TFT 1012 for selection is a TFT of p-channel typealso.

Furthermore, the sensor portion of area sensor of this embodiment isdifferent from the area sensor illustrated in FIG. 7, but the gateelectrode of TFT 1004 for switching and the gate electrode of TFT 1012for selection are both connected with the gate signal lines (G1 to Gx).Consequently, in case of the area sensor of this embodiment, the lightemission period of EL element 1006 contained in each pixel is the samelength as the sampling period (ST1 to STn). By the compositionabove-mentioned, the area sensor of this embodiment can have less numberof lines compared with that of FIG. 7.

Furthermore, the area sensor of this embodiment, is also able to displayan image on its sensor portion 1001.

The composition of this embodiment can be effectuated with anycombination with the embodiment 1 or the embodiment 2.

Embodiment 4

The top view of the area sensor of this embodiment is shown in FIG. 10.130 denotes the source signal line drive circuit and 132 denotes thegate signal line drive circuit. Then, 131 denotes the source signal linedrive circuit for sensor and 133 denotes the gate signal line drivecircuit for sensor. In this embodiment, each one of the source signalline drive circuits and the gate signal line drive circuits areprovided, but this invention for application is not limited to thiscomposition. Two source signal line drive circuits can be provided.Furthermore, Two gate signal line drive circuits can be also provided.

Further in this description, the source signal line drive circuit 130,gate signal line drive circuit 132, source signal line drive circuit 131for sensor, and gate signal line drive circuit 133 for sensor are calledthe driving part.

The source signal line drive circuit 130 has a shift register 130 a, alevel shift 130 b and a sampling circuit 130 c. Furthermore, the levelshift is used only when it is needed and is not always required.Furthermore, in this embodiment the level shift is installed between theshift register 130 a and the sampling circuit 130 c, but this inventionfor application is not limited to this composition. So, it can be of thecomposition where the level shift 130 b is installed in the shiftregister 130 a.

The clock signal (CLK) and the start pulse signal (SP) are entered intothe shift register 130 a. From shift register 130 a, the sampling signalis output in order to sample the analogue signal (analog signal). Theoutput sampling signal is entered into the level shift 130 b and thenoutput with it's potential of bigger amplitude.

The sampling signal sent from the level shift 130 b is entered into thesampling circuit 130 c. Then the analog signals entering into thesampling circuit 130 c are sampled respectively by sampling signals andentered into the source signal lines S1 to Sx.

On the other hand, the drive circuits 132 on the gate signal side haveeach a shift register and a buffer (none of them are illustrated).Depending on the case, the drive circuit 132 on the gate signal side canhave a level shift in addition to the shift register and the buffer.

At the drive circuits 132 on gate signal side, the gate signals from theshift register (not illustrated) is supplied to the buffer (notillustrated), then to the corresponding gate signal line. To each of thegate signal lines G1 to Gy a gate electrode of TFT 104 for switchingpixels for 1 line is connected, and as all the TFT 104 for switching thepixels for 1 line should be ON at the same time, a buffer which permitsa big current flow is used.

Furthermore, the number, composition and actions of the source signalline drive circuits and of the gate signal line drive circuits are notlimited to the composition of this embodiment. The area sensor used inthe sensor-incorporated display of the invention permits the use ofwell-known source signal line drive circuits and gate signal line drivecircuits.

Further in this embodiment, the sensor portion 101 can be of thecomposition shown in FIG. 7 or FIG. 9.

This embodiment can be used in any combination with the embodiment 1 orthe embodiment 3.

Embodiment 5

In this embodiment, a production method of the TFT of the sensor portionon the substrate will be described in details.

At first, as shown in FIG. 11A, on the substrate 700 composed of theglass, such as barium boro-silicated glass, typically #7059 glass or#1737 glass of Coning Co. Ltd. or aluminum boro-silicated glass, isformed a primary film 701 composed of an insulating film, such assilicon oxide film, silicon nitride film or silicon oxide nitride film.For example, a silicon oxide nitride film 701 a fabricated from SiH₄,NH₃ and N₂O by plasma CVD method is formed for 10 to 200 nm (preferably50 to 100 nm), and a silicon oxide nitride hydride film 701 b fabricatedin the same way from SiH₄ and N₂O is formed by laminating in a thicknessof 50 to 200 nm (preferably 100 to 150 nm). In this embodiment theprimary film 701 is shown in a double layer structure, but it can beformed in a structure with a single layer film or multiple layers of theabove-mentioned insulating films.

The semiconductor islands 702 to 707 are formed with crystallinesemiconductor films of which semiconductor film having an amorphousstructure is fabricated by the laser crystallization method or awell-known thermal crystallization method. The thickness of thesemiconductor islands 702 to 707 is formed at 25 to 80 nm (preferably 30to 60 nm). There is no restriction on the material used for thecrystalline semiconductor films, but they are preferably formed withsilicon or silicon-germanium (SiGe) alloy.

When the crystalline semiconductor film is fabricated by the lasercrystallization method, the excimer laser, YAG laser or YVO₄ laser ofpulse oscillation type or continuous emission type. When these lasersare used, it is preferable to use a method consisting of condensing inlinear form the laser light radiated from the laser oscillator andirradiating them on the semiconductor film by optical system. Thecondition of crystallization is normally chosen as appropriate by theperson who performs, but when the excimer laser is used, the pulseoscillatory frequency should be of 30 Hz and the laser energy density of100 to 400 mJ/cm² (typically of 200 to 300 mJ/cm²). If YAG laser isused, the second higher harmonics should be used with the pulseoscillatory frequency of 1 to 10 kHz, and preferably with the laserenergy density of 300 to 600 mJ/cm² (typically of 350 to 500 mJ/cm²).Then the laser light condensed in linear form of a width of 100 to 1000μm, for example, of 400 μm is irradiated over the total surface of thesubstrate, with an overlap rate at this time of the linear laser lightof 80 to 98%.

Then, a gate insulating film 708 covering the semiconductor islands 702to 707 is formed. The gate insulating film 708 is fondled by the plasmaCVD method or sputtering method in a film of a thickness of 40 to 150 nmcontaining silicon. In this embodiment, it is formed in a silicon oxidenitride film of a thickness of 120 nm. Of course, the gate insulatingfilm 708 is not limited to the silicon oxide nitride film as such, butother silicon-containing insulating film can be used in a single layeror multi-layer structure. For example, when a silicon oxide film isused, it can be formed by mixing TEOS (Tetraethyl Orthosilicate) and O₂by the plasma CVD method and electrically discharged with the reactionpressure of 40 Pa, at a substrate temperature of 300 to 400° C., andwith a high frequency (13.56 MHz) electric power density of 0.5 to 0.8W/cm². With a silicon oxide film fabricated like this, goodcharacteristics as a gate insulating film can be obtained by asubsequent thermal anneal at 400 to 500° C.

Then, the first conductive film 709 a and second conductive film 709 bare formed to form a gate electrode on the gate insulating film 708. Inthis embodiment, the first conductive film 709 a is formed with Ta in athickness of 50 to 100 nm and the second conductive film 709 b with W ina thickness of 100 to 300 nm.

The Ta film is formed by the sputtering method, sputtering the target ofTa by Ar. In this case, if an appropriate quantity of Xe or Kr is addedto Ar, the inner stress of Ta film is relieved to prevent the film frompeeling. Furthermore, the resistibility of the Ta film of α phase isapproximately 20 μW and usable for an gate electrode, but theresistibility of the Ta film of β phase is approximately 180 μW cm andnot suitable for a gate electrode. In order to form a Ta film of αphase, it can be easily formed if tantalum nitride, which has a crystalstructure close to a phase of Ta, is in advance formed as a base for Tain a thickness of approximately 10 to 50 nm.

When W film is formed, it is formed by the sputtering method with W astarget. Otherwise, it can be formed also by a thermal CVD method usingtungsten hexafluoride (WF₆). In any way, it is necessary to lower theresistibility to be used as a gate electrode, preferably to less than 20μW cm for the resistibility of W film. The resistibility of W film canbe lowered by having greater crystal grains, but if there are manyimpure elements like oxygen in the W, the crystallization could beprevented to increase the resistibility. For this reason, when thesputtering method is used, a W target of purity 99.9999% is used andsufficient precaution is taken to avoid the mixture of impurities fromthe gaseous phase during the film formation in order that aresistibility of 9 to 20 μW cm can be realized.

Furthermore, in this embodiment the first conductive film 709 a is madewith Ta and the second conductive film 7096 with W, but they are notrestrictive, either of them being able to be formed with an elementchosen from Ta, W, Ti, Mo, Al and Cu, or with an alloy material orcompound material of which the main component is one of said elements.Furthermore, one can use a semiconductor film typically represented bypolycrystal silicon film after doping the impure elements such asphosphorus. The examples of preferable combinations, other than thisembodiment, are forming the first conductive film 709 a with tantalumnitride (TaN) and the second conductive film 709 b with W, forming thefirst conductive film 709 a with tantalum nitride (TaN) and the secondconductive film 709 b with Al, and forming the first conductive film 709a with tantalum nitride (TaN) and the second conductive film 709 b withCu.

Then, the masks 710 to 715 are formed by a resist and an etchingtreatment is carried out in order to form the electrodes and the wires.In this embodiment, ICP (Inductively Coupled Plasma) etching method isused, in which CF₄ and Cl₂ are mixed to the etching gas and RF (13.56MHz) electric power of 500 W is supplied to the coil type electrode at apressure of 1 Pa to generate plasma. To the substrate side (samplestage) also, the RF (13.56 MHz) electric power of 100 W is supplied toapply significantly a negative self-bias voltage. If CF₄ and Cl₂ aremixed, W film and Ta film are both etched to almost the same extent.

Under the above-mentioned condition of etching, by making the form ofthe masks appropriate by means of the resist and by the effect of thebias voltage applied to the substrate side, the edge shape of the firstconductive layer and second conductive layer become tapered. The anglesof the tapered parts are 15 to 45°. In order to etch without leavingresiduals on the gate insulating film, it is preferable to increaseetching time by around 10 to 20%. Because the selectivity of the siliconoxide nitride film against the W film is 2 to 4 (typically 3), thesurfaces where silicon oxide nitride film is exposed will be etched toaround 20 to 50 nm by an over-etching treatment. In this way, by meansof the first etching treatment, the conductive layers 719 to 724 of thefirst shape composed of the first conductive layer and the secondconductive layer are formed (the first layers 719 a to 724 a and thesecond layers 719 b to 724 b). 718 denotes an insulating film, and theregion which is not covered by the first shaped conductive layers 719 to724 is etched up to around 20 to 50 nm to form a thin region. (FIG. 11B)

Then, the first doping treatment is carried out and an impure element isadded to give an n-type. (FIG. 11C) The doping can be carried out by anion doping method or ion implantation method. The ion doping method iscarried out under condition of the dose of 1×10¹³ to 5×10¹⁴ atoms/cm²,with the accelerating voltage of 60 to 100 keV. For the impure element,which gives n-type, the elements of 15 group, typically the phosphorus(P) or the arsenic (As), are used, and the phosphorus (P) is used here.In this case, The conductive layers 719 to 724 become a mask against theimpure element which gives n-type and impurity regions 726 to 731 areformed in a self-matching way. To the first impurity regions 726 to 731,the impure element is added at the concentration between 1×10²⁰ to1×10²¹ atoms/cm³ to give n-type.

Then, the second etching treatment is carried out as shown in FIG. 11D.Likewise, the ICP etching method is used, in which CF₄, Cl₂ and O₂ aremixed to the etching gas and RF electric power (13.56 MHz) of 500 W issupplied to the coil type electrode at a pressure of 1 Pa to generateplasma. To the substrate side (sample stage), RF (13.56 KHz) electricpower of 50 W is input to apply a self-bias voltage lower than the firstetching treatment. By these conditions the W film is etchedanisotropically and then the first conductive layer Ta is etchedanisotropically in a lower etching speed in order to form the secondshaped conductive layers 733 to 738 (the first conductive layers 733 ato 738 a and the second conductive layers 733 b to 738 b). 732 denotes agate insulating film, the region which is not covered by the secondshaped conductive layers 733 to 738 is etched further up to around 20 to50 nm and forms a thin region.

The etching reaction of the W film and the Ta film by the mixed gas ofCF₄ and Cl₂ can be supposed by the radicals or ionic species generatedand the vapor pressure of reaction products. When the vapor pressures offluoride and chloride of W and Ta are compared, WF₆ which is a fluorideof W is extremely important and other WCl₅, TaF₅ and TaCl₅ are almostthe same. Accordingly, both the W film and Ta film are etched by themixed gas of CF₄ and Cl₂. However, if an appropriate quantity of O₂ isadded to this mixed gas, CF₄ and O₂ react to become CO and F, and alarge quantity of F radical and F ion are generated. As a result ofthis, the etching speed of W film with higher vapor pressure of fluorideincreases. On the other hand, for Ta there is relatively less increaseof etching speed by the increase of F. Furthermore, as Ta is easilyoxidized, the surface of Ta is oxidized by the addition of O₂. As theoxides of Ta do not react with the fluorine or the chlorine, the etchingspeed of Ta film decreases further. In consequence, it becomes possibleto differentiate the etching speed of W film and Ta film in order tohave the etching speed of W film greater than that of Ta film.

Then, the second doping treatment is executed as shown in FIG. 12A. Inthis case, with the conditions of less dose and higher acceleratingvoltage than the first doping treatment, the impure element giving then-type is doped. For example, executing with the accelerating voltage of70 to 120 keV and the dose of 1×10¹³/cm², new impurity region is formedin the interior of the first impurity region formed on the semiconductorislands as shown in FIG. 11C. The doping will be effectuate, by using asmasks the second shaped conductive layers 733 to 738, so as to theimpure element to be added also to the region under the secondconductive layers 733 a to 738 a. Of this way, the third impurityregions 739 to 744, which overlap the second conductive layers 733 a to738 a, and the second impurity regions 746 to 751 between the firstimpurity regions and the third impurity regions. The impure elementwhich gives the n-type will be determined for the concentration to be1×10¹⁷ to 1×10¹⁹ atoms/cm³ in the second impurity regions and 1×10¹⁶ to1×10¹⁸ atoms/cm³ in the third impurity regions.

Then, as shown in FIG. 12B, at the semiconductor islands 704 and 707which form TFT of p-channel type, the fourth impurity regions 755 to 757are formed with the conductive type contrary to the negative conductivetype. By using as masks against the impure elements, the secondconductive layers 735 b and 738 b, the impurity regions are formed in aself-matching manner. At this moment, all the surface of thesemiconductor islands 702, 703 and 706 and a part of 705, which form TFTof n-channel type, should be in advance covered by the resist masks 752to 754. Although the impurity regions 755 a to 755 c, 756 a to 756 c,and 757 a to 757 c are added of phosphorus with differentconcentrations, they are formed by the ion doping method using thediborane (B₂H₆), the impurity concentration of all the regions being2×10²⁰ to 2×10²¹ atoms/cm³.

By the above-mentioned processes the impurity region is formed in eachto semiconductor island. The second conductive layers 733 to 738, whichoverlaps the semiconductor islands, work as the electrodes.

After having eliminated the resist masks 752 to 754, a process ofactivation of the impure element added to each semiconductor islandshould be executed for the aim of controlling the conductive type asshown in FIG. 12C. This step is carried out by a thermal annealingmethod by means of an annealing furnace. Otherwise, a laser annealingmethod or a rapid thermal annealing (RTA) method can be applied. Thethermal annealing method is normally carried out in the nitrogenatmosphere of oxygen concentration of less than 1 ppm, preferably ofless than 0.1 ppm and at a temperature of 400 to 700° C., typically at500 to 600° C., and in this embodiment it is carried out at 500° C.during 4 hours. However, If the wiring material utilized for 733 to 738is weak to the heat, it is preferred to execute the activation afterhaving formed interlayer insulating film (with silicon as the maincomponent) in order to protect the wires, etc.

Furthermore, in the atmosphere containing 3 to 100% of hydrogen, a heattreatment is carried out at 300 to 450° C. during 1 to 12 hours as astep of hydrogenation of the semiconductor islands. This step is a stepto terminate the dangling bond of semiconductor layers by means of thethermally excited hydrogen. As an another means of hydrogenation, theplasma hydrogenation (which uses the hydrogen excited by plasma) can becarried out.

Next, the first interlayer insulating film 760 is formed in a thicknessof 100 to 200 nm from the silicon oxide nitride film. On this film, thesecond interlayer insulating film 761 is formed consisting of organicinsulating material. Then, an etching step is executed in order to formcontact holes.

Then, the source wires 762 to 767, which form a contact with the sourceregion to of semiconductor islands, the drain wires 768 to 773, whichform a contact with the drain region, are formed. Not shown in thefigure, in this embodiment this electrode is used as an electrode of3-layer structure formed continuously by a sputtering method a Ti filmof 100 nm, an Al film containing Ti of 300 nm and a Ti film of 150 nm(FIG. 13A).

Then, the passivation film 774 is formed so as to cover the source wires762 to 767, the drain wires 768 to 773 and the second interlayerinsulating film 761. The passivation film 774 is formed of a siliconnitride film at a thickness of 50 nm. Furthermore, the third interlayerinsulating film 775 consisting of an organic resin is formed inthickness around of 1000 nm. For the organic resin film, polyimide,acrylic, polyimide-amide, etc. can be used. The advantages of using anorganic resin film, that the formation of it is easy, the parasiticcapacitance can be decreased because the relative permittivity is low,and the excellent planarization, etc. can be mentioned. Furthermore,other organic resin film than those mentioned above also can be used.Here, after applied to the substrate, a type of polyimide, whichthermally polymerize, is used to form it by burning at 300° C.

Then, the contact holes are formed to reach the drain wires 773 and 771on the third interlayer insulating film 775 and the passivation film774, and the pixel electrode 776 and the wire for sensor 777 are formed.In this embodiment, a indium-tin oxide (ITO) film is formed at athickness of 110 m, and the wire for sensor 777 and the pixel electrode776 are formed at the same time by patterning. Furthermore, atransparent conductive film by mixing 2 to 20% of zinc oxide to theindium oxide can also be used. This pixel electrode 776 will be theanode of EL element (FIG. 13B).

Then, the bank 778 is formed of a resin material. The bank 778 can beformed by patterning of acrylic film or polyimide film of a thickness 1to 2 μm. This bank 778 is formed between the pixels in a form of stripe.In this embodiment, the bank 778 is formed along on the source wire 776but it can be also formed along on the gate wire (not illustrated).Furthermore, the material forming the bank 778 can be mixed with apigment or the like to use it as a shield film.

Also, at the same time as the bank 778 is formed, on the contact hole ofpixel is electrode 776 reaching to the drain wire 773, a planarizationpart can be formed to make plane the EL layer which is formed on thepixel electrode 776.

Then, the EL layer 779 and cathode (MgAg electrode) 780 are formedsuccessively by the vacuum evaporation method without atmosphericrelease. Furthermore, the film thickness of EL layer 779 can be of 80 to200 nm (typically of 100 to 120 nm) and the thickness of cathode 780 canbe of 180 to 300 nm (typically of 200 to 250 nm). Furthermore, whileonly one pixel is illustrated in this embodiment, the EL layer emittingred color, the EL layer emitting green color and the EL layer emittingblue color are also formed simultaneously.

In this process, the EL layers 779 and the cathodes 780 are formedsuccessively for the pixel corresponding to red color, the pixelcorresponding to green color and the pixel corresponding to blue color.However, as the EL layer 779 is not so resistant to solution, each colormust be formed separately without using the photolitography technology.This is preferably carried out by hiding all other pixels except thedesired one by means of a metal mask in order to form selectively the ELlayer 779 and the cathode 780 only for the required part.

That is to say, firstly a mask is set to hide all the pixels except thepixel corresponding to red color and selectively the red color emittingEL layer and cathode are formed by means of this mask. Then a mask isset to hide all the pixels except the pixel corresponding to green colorand selectively the green color emitting EL layer and cathode are formedby means of this mask. Then in the same manner, a mask is set to hideall the pixels except the pixel corresponding to blue color andselectively the blue color emitting EL layer and cathode are formed bymeans of this mask. Furthermore, in this example it is explained to usedifferent masks for different colors, but only one mask can be used fordifferent colors. Furthermore, it is preferable to continue thetreatment to form the EL layer and cathode for all pixels withoutdisrupting the vacuum.

Furthermore, while in this embodiment the EL layer 779 has a singlelayer structure consisting only of a light emission layer, but the ELlayer may have also a hole transport layer, a hole injection layer, anelectron transport layer, an electron injection layer, etc. In this way,there have already been reported various combinations and any of thesecan be used. For EL layer 779 well known materials can be used. As thewell-known materials, an organic material is suitable in taking accountof the EL-drive voltage. Furthermore, while in this embodiment a MgAgelectrode is used for the cathode of EL element, but other well-knownmaterials can be used as well.

In this way, a sensor substrate of the structure shown in FIG. 13C canbe achieved. Furthermore, it is effective to continuously executeprocesses of forming the bank 778 and cathode 780 by using a thin filmforming device of the multi-chamber system (or in-line system) withoutatmospheric release.

Furthermore, in this embodiment, the processes of fabrication of TFTscontained in the sensor portions are explained, but the TFTs containedin the driving parts also can be formed on the substrate at the sametime with reference to the above-mentioned process.

781 denotes the TFT for buffer, 782 denotes the TFT for selection, 783denotes to the TFT for reset, 784 denotes the photodiode, 785 denotesthe TFT for switching and 786 denotes the TFT for driving.

Though in this embodiment the TFT 785 for switching is made in a singlegate structure, it can be a double gate structure, triple gatestructure, or a multi-gate structure having more than three gates. Bymaking the TFT 785 for switching have the double gate structure, itbecomes a structure having in practice two TFTs connected in series andhas an advantage to permit to reduce the off-current.

Then in this embodiment, the gate electrode 736, which is installed onthe photodiode 784, is maintained at a potential at which there is nocurrent flow through the photoelectric conversion layer 789 which isprovided between the cathode 787 and the anode 788.

In this embodiment, TFT 781 for buffer, TFT 782 for selection, TFT 785for switching are the TFT of n-channel type, and each one of them hasthe channel forming regions 801 to 803, the third impurity regions 804to 806 (Lov region) overlapping the first gate electrodes 733 a, 734 aand 737 a, the second impurity regions 807 to 809 (Loff region) formedon the outside of the first gate electrodes 733 a, 734 a and 737 a, andthe first impurity regions 810 to 812 functioning as source region ordrain region.

Further in this embodiment, TFT 783 for reset and TFT 786 for driving ELare the TFT of p-channel, and each TFT has the channel forming regions813 and 184, the fourth impurity regions 815 and 816 overlapping thefirst gate electrodes 735 a and 738 a, the fifth impurity regions 817and 818 formed on the outside of the first gate electrodes 735 a and 738a, and the sixth impurity regions 819 and 820 functioning as sourceregion or drain region.

In fact, when achieved up to FIG. 13C, it is preferable to protect themfrom the open air by means of a packaging (encapsulation) with a highlyair tight and less degassing protective film (laminate film, ultravioletcuring resin film, etc.) or a transparent sealing material. At thistime, one can increase the reliability of EL elements by making theinside of the sealing material filled with inert atmosphere or byarranging a hygroscopic substance (for example, barium oxide) in theinside.

Furthermore, when the air tightness becomes higher by a process, forexample, of packaging, connectors (flexible print circuit: FPC) toconnect the terminals, which are drawn from the elements and circuitsformed on the substrate, with the external signal terminals installed toachieve it as a final product. In this specification, a product readyfor delivery like this shall be called an area sensor.

Furthermore, this invention is not limited to the above-mentioned methodof fabrication and it is possible to fabricate by a well-known method.Furthermore, this embodiment can be effectuated in any combination withembodiments 1 through 4.

Embodiment 6

This embodiment is to describe the situations in which this invention isused. If the identification of an individual does not require such ahigh degree of identification such as a biological information, it ispossible to not use this invention. In the case of transferring a smallamount of money, for example, this is not necessarily required.

For this reason, there is a possibility to choose whether theidentification is necessary or not and to set up to make theidentification selectively, for example, only for the cases where thetransfer of a large amount of money is involved. It is also possible touse it according to the situations of clients, or to set up in advancethe criteria for judgement on the control microcomputer of portablecommunication device and use it only in the cases where the numericvalue is more than a certain value. Furthermore, it is possible totransmit through the Internet the identification result only when theidentification result is required.

Furthermore, this embodiment can be effectuated in any combination withembodiments 1 through 5.

Embodiment 7

This embodiment describes an example of fabrication of EL(electro-luminescence) display (area sensor) which is used for thesensor-incorporated display of this invention. Furthermore, FIG. 14A isa top view of the EL display of this invention and FIG. 14B is thesectional view.

In FIGS. 14A and 14B, 4001 is a substrate, 4002 a pixel part, 4003 adrive circuit on the source side, 4004 a drive circuit of gate side,with each drive circuit going through the wire 4005 to FPC (flexibleprint circuit) 4006, where they are connected with external equipment.

At this moment, The first sealing material 4101, the covering material4102, the loading material 4103 and the second sealing material 4104 areinstalled so as to surround the pixel part 4002, the drive circuit onthe source side 4003 and the drive circuit on the gate side 4004.

FIG. 14B is the sectional view of the FIG. 14A cut at A-A′, in which aphotodiode 4201 as well as a TFT for driving EL (TFT to control thecurrent to the EL element) contained in the pixel part are formed on thesubstrate 4001.

For the TFT 4202 for driving EL, a P-channel type TFT that is fabricatedby a well-known method is used. And to the pixel part 4002, a holdingcapacitance (not illustrated) connected to the gate of TFT 4202 fordriving EL is installed.

On the photodiode 4201 and the TFT 4202 for driving EL, an interlayerinsulating film (planarization film) 4301 is formed and then a pixelelectrode (anode) 4302 is formed on it in order to connect electricallywith the drain of TFT 4202 for driving EL. For the pixel electrode 4302,a transparent conductive film with a high work function should be used.For the transparent conductive film, the compound of indium oxide andtin oxide, a compound of indium oxide and zinc oxide, zinc oxide, tinoxide, or indium oxide can be used. Furthermore, the above-mentionedtransparent film to which gallium is added can also be used.

Then, the insulating film 4303 is formed on the pixel electrode 4302 andin this insulating film 4303 an opening is formed on the pixel electrode4302. At this opening, the EL (electro-luminescence) layer 4304 isformed on the pixel electrode 4302. The EL layer 4304 can be made with awell known organic EL material or inorganic EL material. Furthermore,for the organic EL material, while there are low-molecular series(monomer series) materials and high-molecular series (polymer series)materials. both of them can be used.

For the fabrication method of EL layer 4304, a well-known vaporevaporation technique or method of application technique can be used.And for the structure of the EL layer, the hole injection layer, thehole transport layer, the light emission layer, the electron transportlayer or the electron injection layer can be used in any combination toform a laminated structure or single layer structure.

On the EL layer 4304 is formed the cathode 4305 consisting of aconductive film having light blocking effect (typically conductive filmmainly composed of aluminum, copper or silver, or a film laminated withthem and other conductive film). Furthermore, it is preferable toeliminate as much as possible the humidity and oxygen which are at theinterface between the cathode 4305 and the EL layer 4304. Therefore, aworkmanship is required to continuously deposit both films in a vacuum,otherwise to form EL layer 4303 in nitrogen or rare gas atmosphere andthen form the cathode 4305 without coming into contact with the oxygenor humidity. In this embodiment, the above-mentioned film depositionbecomes possible by using a film deposition system of multi-chamber type(cluster tool type).

Then, the electrode 4305 is electrically connected with the wire 4005 inthe region shown by 4306. The wire 4005 is to supply the prescribedvoltage to the electrode 4305 and is connected electrically to the FPC4006 via the anisotropic conductive film 4307.

As mentioned above, the EL element is formed consisting of the pixelelectrode (anode) 4302, the EL layer 4304 and the cathode 4305. This ELelement is surrounded by the covering material 4102, which is laminatedto the substrate 4001 by the first sealing material 4101 and the firstsealing material 4101, and encapsulated with the loading material 4103.

As the covering material 4102, the glass, metals (typically stainlessmaterial), ceramics, plastics (including plastic films) can be used. Asthe plastic material, FRP (Fiberglass Reinforced Plastics) plate, PVF(polyvinyl fluoride) film, Mylar film, polyester film or acrylic resinfilm can be used. Furthermore, a sheet composed of the aluminum foilinserted between the PVF films or Mylar films can be used as well.

However, if the radiation of the light from the EL element is directedto the covering material side, the covering material must betransparent. In such a case, a transparent substance like a glass plate,plastic plate, polyester film or acrylic film should be used.

For the loading material 4103, the ultraviolet curing resin or thermalcuring resin can be used, and also PVC (polyvinyl chloride), acrylic,polyimide, epoxy resin, silicone resin, PVB (polyvinyl butyral), or EVA(ethylene-vinyl acetate) can be used. If a hygroscopic substance(preferably barium oxide) or other oxygen absorbent is put in theinterior of this loading material 4103, the degradation of EL elementcan be prevented.

Furthermore, it is possible to put a spacer in the loading material4103. In this case, the spacer can be formed with barium oxide to makethe spacer itself hygroscopic. Furthermore, if the spacer is installed,it will be effective to provide a resin film on the cathode 4305 as abuffer layer in order to reduce the pressure from the spacer.

Then the wire 4005 is connected electrically to FPC 4006 via theanisotropic conductive film 4307. The wire 4005 transmits to FPC 4006the signals, which are sent to the pixel part 4002, the drive circuit onthe source side 4003 and the drive circuit on the gate side 4004 andthen connected electrically with external equipment via FPC 4006.

Furthermore, in this embodiment the second sealing material 4104 isprovided so as to cover the exposed part of the first sealing material4101 and a part of FPC 4006 in order to achieve a structure whichpermits to shut out completely the outside air from the EL element. TheEL display having the sectional view of FIG. 14B is s obtained in thisway.

Embodiment 8

This embodiment describes an example different from FIGS. 14A and 14Bconcerning the EL (electro-luminescence) display. Now, FIG. 15A is thetop view the EL display of this invention and FIG. 15B is the sectionalview of the EL display of this invention. But for the parts, which havebeen already shown in FIGS. 14A and 14B, the same codes will beutilized.

In FIGS. 15A and 15B, 4501 is a covering layer and it is formed on thesubstrate 4001 so as to cover the pixel part 4002, the drive circuit onthe source side 4003 and is the drive circuit on the gate side 4004.

FIG. 15B corresponds to the sectional view of FIG. 15A cut at A-A′, inwhich the interlayer insulating film 4301 made of resin material isformed on the photodiode 4201 and the TFT 4202 for driving EL, and thenthe pixel electrode (anode) 4302 is formed on it to connect electricallywith the drain of TFT 4202 for driving EL.

Then, the insulating film 4303 is formed on the pixel electrode 4302,and an opening is formed in the insulating film 4303 on the pixelelectrode 4302. In this opening, the EL (electro-luminescence) layer4304 is formed on the pixel electrode 4302. For the EL layer 4304 awell-known organic EL material or inorganic EL material can be used.Furthermore, as the organic EL material, while there are low-molecularseries (monomer series) materials and high-molecular series (polymerseries) materials, both of them can be used.

As the fabrication method of EL layer 4304, a well-known vapordeposition technique or method of application technique can be used. Andfor the structure of EL layer, the hole injection layer, hole transportlayer, light emission layer, electron transport layer or electroninjection layer can be used in any combination to form a laminatedstructure or single layer structure.

On the EL layer 4304 is formed the cathode 4305 consisting of aconductive film having light blocking effect (typically conductive filmwith aluminum, copper or to silver as the main component, or laminatedfilm with them and other conductive film). Furthermore, it is preferableto eliminate as much as possible the humidity and oxygen which are atthe interface between the cathode 4305 and the EL layer 4304. Therefore,workmanship is required to continuously deposit both films in a vacuum,otherwise to form EL layer 4303 in nitrogen or rare gas atmosphere andthen form the cathode 4305 without coming into contact with the oxygenor humidity. In this embodiment, the above-mentioned film depositionbecomes possible by using a film deposition system of multi-chamber type(cluster tool type).

In this embodiment, a barrier layer 4501 is formed on the cathode 4305.As the barrier layer 4501 in this embodiment, The DLC (Diamond likecarbon) film with addition of Si was used, but this embodiment is notlimited to this. Besides the DLC film with addition of Si, a tantalumoxide, silicon nitride, aluminum nitride, silicon carbide or DLC filmcan also be used.

Since an EL layer has a weakness to the heat, the cathode and thebarrier layer are preferable to be formed at as low a temperature aspossible (more preferably between room temperature and 120° C.). Whilein this embodiment the barrier layer 4501 is formed in the plasma CVDmethod at a room temperature, it is also possible in the sputteringmethod. By forming the barrier layer in the plasma CVD method, it ispossible to form continuously the EL layer, the cathode, and the barrierlayer in the multi-chamber. The thickness of barrier layer is preferablyof 10 to 100 nm and, in this embodiment, the barrier layer 4501 wasformed at a thickness of 50 nm.

After the barrier layer formation 4501, a cover layer 4502 consisting oforganic resin is formed on the barrier 4501. Furthermore, after havingsolved the organic resin in the solvent and having prepared the organicresin solution to an appropriate viscosity, it is positioned in thematerial chamber and applied in accordance with the electrolyticapplication method to form the covering layer 4502. At this moment, theviscosity of the organic resin solution is preferred to be of 1×10⁻³ to3×10⁻² Pa·s.

Further at this moment, by adding a hygroscopic agent or antioxidantagent such as barium oxide in the interior of the organic resin solutionto form a cover layer, the humidity and oxygen which promote thedegradation of EL layer can be prevented is from introducing into the ELlayer.

Then, the cathode 4305 is connected electrically with the wire 4005 inthe region shown by 4306. The wire 4005 is to supply the prescribedvoltage to the cathode 4305 and is connected electrically to the FPC4006 via the anisotropic conductive film 4307.

For the covering material 4102, the glass, metals (typically stainlessmaterial), ceramics and plastics (including plastic film) can be used.As for the plastic material, FRP (Fiberglass-Reinforced Plastics) plate,PVF (polyvinyl fluoride) film, Mylar film. polyester film or acrylicresin film can be used. Furthermore, a sheet composed of the aluminumfoil inserted between the PVF films or Mylar films can be used as well.

However, if the light coming from EL element is radiated in thedirection of the covering material, the covering material must betransparent. In such a case, a transparent substance such as glassplate, plastic plate, polyester film or acrylic film should be used.

Furthermore, it is possible to put a spacer in the covering layer 4502.At this time, by forming the spacer with barium oxide, it is possible togive a hygroscopicity to the spacer itself. Besides, in the case where aspacer is installed, it is effective to provide a resin film on thecathode 4305 as a buffer layer in order to reduce the pressure from thespacer.

Furthermore, the wire 4005 is electrically connected with FPC 4006 viathe anisotropic conductive film 4307. The wire 4005 transmits to FPC4006 the signals that are sent to the pixel part 4002, the drive circuiton the source side 4003 and the drive circuit on the gate side 4004, andthen connected electrically to external equipment by FPC 4006.

Besides, in this embodiment, the second sealing material 4104 isprovided so as to cover the exposed part of the first sealing material4101 and a part of FPC 4006 in order to get a structure permitting toshut out completely the outside air from the EL element. By these, theEL display having the sectional view of FIG. 15B is achieved.

The portable communication device of this invention is possible toidentify an individual by means of the functions of the sensorincorporated in the device and has a possibility to have a highreliability and simplicity, compared with the conventionalidentification works consisting of entering a numerical value (personalidentification number).

1. (canceled)
 2. A portable information device comprising: a displayportion configured to read biological information of a user; and acircuit portion configured to identify the user by checking thebiological information, wherein the display portion comprises asemiconductor layer and a metal layer over the semiconductor layer,wherein the semiconductor layer includes a first impurity region and asecond impurity region, wherein a first edge of the metal layer isaligned with an edge of the first impurity region, and wherein a secondedge of the metal layer is aligned with an edge of the second impurityregion.
 3. The portable information device according to claim 2, whereinthe semiconductor layer is included in a photodiode of the displayportion.
 4. The portable information device according to claim 2,wherein the display portion further comprises a reset transistor, andwherein the reset transistor is electrically connected to one of thefirst impurity region and the second impurity region.
 5. The portableinformation device according to claim 2, wherein the biologicalinformation is a fingerprint.
 6. The portable information deviceaccording to claim 2, wherein the biological information is a palmpattern.
 7. The portable information device according to claim 2,wherein the display portion comprises an organic EL display.
 8. Theportable information device according to claim 7, wherein the organic ELdisplay comprises a first substrate and a second substrate over thefirst substrate, wherein a first sealing material is provided betweenthe first substrate and the second substrate, and wherein a secondsealing material is provided outside the first sealing material.
 9. Theportable information device according to claim 2, further comprising anoperating key configured to start to read the biological information ofthe user.
 10. The portable information device according to claim 9,wherein the operating key is provided on a side of the portableinformation device.
 11. A portable information device comprising: adisplay portion configured to read biological information of a user; acircuit portion configured to identify the user by checking thebiological information; and an antenna configured to transmit anidentification information of the user, wherein the display portioncomprises a semiconductor layer and a metal layer over the semiconductorlayer, wherein the semiconductor layer includes a first impurity regionand a second impurity region, wherein a first edge of the metal layer isaligned with an edge of the first impurity region, and wherein a secondedge of the metal layer is aligned with an edge of the second impurityregion.
 12. The portable information device according to claim 11,wherein the semiconductor layer is included in a photodiode of thedisplay portion.
 13. The portable information device according to claim11, wherein the display portion further comprises a reset transistor,and wherein the reset transistor is electrically connected to one of thefirst impurity region and the second impurity region.
 14. The portableinformation device according to claim 11, wherein the biologicalinformation is a fingerprint.
 15. The portable information deviceaccording to claim 11, wherein the biological information is a palmpattern.
 16. The portable information device according to claim 11,wherein the display portion comprises an organic EL display.
 17. Theportable information device according to claim 16, wherein the organicEL display comprises a first substrate and a second substrate over thefirst substrate, wherein a first sealing material is provided betweenthe first substrate and the second substrate, and wherein a secondsealing material is provided outside the first sealing material.
 18. Theportable information device according to claim 11, further comprising anoperating key configured to start to read the biological information ofthe user.
 19. The portable information device according to claim 18,wherein the operating key is provided on a side of the portableinformation device.